Recently, the research team led by Professor Zhang Xing and Professor Ma Weigang from Tsinghua University's School of Aerospace Engineering has made a significant breakthrough in the study of thermal transport at two-dimensional (2D) van der Waals heterojunction interfaces. In the post-Moore era, van der Waals heterojunctions have emerged as promising candidates for next-generation integrated circuits, thanks to their tunable band structures and outstanding electrical properties. Through molecular dynamics simulations, the team uncovered the mechanism responsible for the high thermal rectification ratio in monolayer MoSe₂-WSe₂ in-plane 2D heterojunctions. They identified two key factors: the asymmetry of materials on either side of the interface and the phonon localization effect. This discovery offers fresh insights into enhancing the heat dissipation capabilities of electronic devices and carries substantial implications for the advancement of chip cooling technologies.