A groundbreaking advancement has been achieved by the research team led by Academician Guo Guangcan at the University of Science and Technology of China (USTC) in the exploration of engineered divacancy color centers within silicon carbide. Team members Li Chuanfeng, Xu Jinshi, and their colleagues, in a collaborative effort with Wiwittawin Sukmas, Pranut Potiyaraj, and their peers from Chulalongkorn University in Thailand, have successfully demonstrated reversible control over the charge states of these engineered divacancy color centers in silicon carbide. Moreover, they have confirmed the spin-dependent nature of the ionization process associated with these centers. This pivotal discovery lays a robust scientific groundwork for the advancement of spin qubit readout technologies in silicon carbide, especially those leveraging spin-charge state interconversion and photocurrent-based detection methods. The pertinent research outcomes were published on February 12.