Data sourced from Tianyancha reveals that Shanghai GT Semiconductor Co., Ltd. has recently secured patent approval for a method named 'Semiconductor Test Structure Preparation Method', bearing the authorization announcement number CN119361581B. The announcement date for this patent grant is October 17, 2025, with the initial application submitted on October 31, 2024. This particular patent outlines a method for preparing a semiconductor test structure, encompassing the following steps: initially providing a substrate; then, creating multiple mask strips on the substrate's top surface, which are spaced apart along a first direction and extend along a second direction. Utilizing these mask strips as a guide, an ion implantation process is carried out with consistent energy but varying doses into an initial test area, resulting in a target test structure that comprises two doped regions. Based on the implanted ion dose, diffusion width, and breakdown voltage of several target test structures, a correlation is established between the implanted ion dose, diffusion width, and breakdown voltage across different target test structures. Furthermore, the actual diffusion width of a target test junction intended for measurement is determined based on its actual implanted dose and actual breakdown voltage. This method leverages existing process flows without the need for additional photomasks. By employing straightforward and effective target test structures, it establishes a correlation for monitoring the actual diffusion width of ion implantation, thus illustrating the impact of implantation on device performance under varying dose conditions.