According to information sourced from Tianyancha, Wuhan Xinxin Semiconductor Manufacturing Corporation (XMC) has recently been granted an invention patent authorization. The patent, titled 'Memory Block, Its Manufacturing Process, and Memory Cell,' bears the patent number CN117998855B. The application for this patent was submitted on October 27, 2022, and the authorization was officially announced on October 17, 2025.

The crux of this patented technology lies in its innovative method for crafting memory blocks. Specifically, it involves the creation of word line holes on a semiconductor substrate, a process that effectively divides the memory sub-array layers. By employing floating gate memory structures and filling them with appropriate gate materials, this method enables the formation of high-density memory cells, marking a significant advancement in semiconductor memory technology.