Recently, a research team at the University of Science and Technology of China (USTC), a constituent institution of the Chinese Academy of Sciences, successfully enabled the coexistence of ferroelectricity, metallicity, and superconductivity within the (SnSe)_1.16(NbSe₂) crystal. They also developed the first metallic ferroelectric memristor capable of functioning at room temperature. This innovative material sustains high conductivity—with a carrier density surpassing 10²¹ cm⁻³—and stable ferroelectric polarization (featuring a Curie temperature of 383K) at ambient conditions, thanks to its interlayer weakly coupled structure. Additionally, it exhibits superconductivity at 3.25K. The memristor crafted from this material stands out for its low power consumption and exceptional stability, paving the way for the next generation of low-energy electronic devices and neuromorphic computing hardware.