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Artificial synapses pave the way for simulating bionic neural systems, offering the potential to overcome the von Neumann bottleneck. While they hold tremendous promise, current neuromorphic devices still grapple with challenges, including risks of electrolysis, material degradation, ferroelectric fatigue, and irreversible changes in conductance due to ion migration or trapping. Recently, the research team at the Beijing Institute of Technology put forward a proposal: the inherent structural distortion in the FePSe₃ material, caused by strong electron-phonon coupling, gives rise to a self-trapping mechanism. This mechanism specifically captures electrons and forms polarons within 1 picosecond, achieving charge localization. This study offers a solution rooted in microscopic mechanisms for constructing stable, high-performance artificial synapse devices.
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