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On January 23, a research team hailing from the Institute of Physics at the Chinese Academy of Sciences achieved a remarkable feat. They successfully fabricated freestanding fluorite-structured ferroelectric thin films through a laser-based approach. Leveraging cutting-edge electron microscopy techniques, the team, for the very first time, was able to observe and manipulate one-dimensional charged domain walls within these thin films at the atomic scale. This groundbreaking discovery challenges the long-held conventional wisdom that domain walls in three-dimensional crystals are invariably two-dimensional structures. Moreover, it lays a solid scientific groundwork for the advancement of ultra-high-density artificial intelligence devices. The paper detailing these findings was published on the same day in the esteemed international academic journal, Science.
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