Recently, a research team headed by Wang Luda from the School of Integrated Circuits at Peking University has achieved a notable breakthrough in the realm of MEMS hydrogen-sensitive sensors. The resistive gas sensor, crafted by this team and based on metal oxide semiconductors (MOS), incorporates a unique combination of a tantalum oxide-tin oxide heterojunction and a palladium nanocatalytic layer. The sensor is fabricated using a wafer-level physical vapor deposition process. This innovative design enables the sensor to detect hydrogen at an exceptionally rapid pace, boasting a response time of just 2.3 seconds and a recovery time of 7.2 seconds. When operated at 150°C, the sensor exhibits a remarkable sensitivity of 1398, coupled with an outstanding selectivity ratio of over 800 against interfering gases like methane. This groundbreaking accomplishment has been documented in the esteemed journal 'Sensors and Actuators B: Chemical,' offering vital technical backing for the secure and efficient utilization of hydrogen energy.