The IEEE International Electron Devices Meeting (IEDM) stands as a leading academic conference within the realm of semiconductor microelectronic devices, often hailed as the "Microelectronics Olympics". It acts as a crucial forum where prominent international semiconductor technology firms (such as Intel, Samsung, TSMC, IBM, etc.) and esteemed universities come together to exhibit their cutting-edge technological breakthroughs. The 2025 IEDM conference took place from December 6 to 10 in San Francisco, USA, centering on semiconductor and electronic component technologies. It encompassed research avenues like CMOS transistors, innovative memory devices, and quantum devices. In a notable presentation, Intel Foundry, in partnership with imec, introduced a selective recessed etching technique tailored for the oxide capping layer of 2DFET materials. ChangXin Memory Technologies proudly displayed the world's inaugural BEOL-integrated multi-layer DRAM architecture. Meanwhile, Xiaomi's RF team showcased their prowess in low-voltage GaN power amplifier technology. Furthermore, IEDM fosters academic and industrial dialogue through technical presentations, panel discussions, and various other interactive formats.
