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Peking University's School of Electronics Si Jia-Zhang Zhiyong Team Develops van Hove Cold-Source Transistor
4 week ago /
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Author：小编
As integrated circuits progress towards increasingly intricate nodes, minimizing power consumption has emerged as a pivotal hurdle for information processing systems in the post-Moore era. The subthreshold swing (SS) of conventional silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs) is inherently restricted by the Boltzmann distribution. Consequently, achieving a subthreshold swing below 60 mV/dec at room temperature proves to be a formidable task. This inherent physical constraint impedes any further reduction in the operating voltage Vdd. As a result, power consumption is on the verge of reaching a critical bottleneck as device dimensions continue to scale down.
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