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On December 17, 2025, the team of Xinran Wang and Weisheng Li from the School of Integrated Circuits at Nanjing University, along with collaborators, successfully developed an antimony crystal epitaxial contact technology. This technology resolved the ohmic contact challenge for two-dimensional semiconductors at sub-20-nanometer contact lengths. Based on this technology, the team successfully fabricated high-performance molybdenum disulfide (MoS₂) transistor devices at the 1-nanometer node, demonstrating the potential applications of two-dimensional semiconductors in integrated circuits during the angstrom era. The relevant findings were published online in the journal Nature Electronics under the title 'Scaled crystalline antimony Ohmic contacts for two-dimensional transistors'.
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