At the IEEE International Electron Devices Meeting 2025 (IEDM 2025), Intel Foundry presented a pivotal technology for system - level chips in the age of AI: the next - generation embedded decoupling capacitor. This innovative technology makes use of three novel metal - insulator - metal (MIM) materials, namely ferroelectric hafnium zirconium oxide, titanium oxide, and strontium titanate. By employing a deep trench structure, it has achieved a remarkable leap in capacitance density, reaching 60 - 98 fF/μm². Moreover, its leakage levels are 1000 times lower than the industry's target values. This significant breakthrough effectively tackles the power supply bottlenecks that emerge after transistors are scaled down to the 2nm generation. It offers more stable power support for AI accelerators, CPUs, GPUs, and other types of chips. In essence, it signifies a shift in the competitive landscape of advanced manufacturing processes. The focus has now moved from optimizing transistor structures to enhancing the power supply stack systems.