Recently, the 71st International Electron Devices Meeting (IEDM 2025) took place in San Francisco, USA. A research paper, collaboratively crafted by Xiaomi Corporation's Mobile Phone Division, Suzhou Dynax Semiconductor Co., Ltd., and The Hong Kong University of Science and Technology, was successfully chosen for presentation.

This paper stands out as the first to detail a high - efficiency, low - voltage silicon - based gallium nitride RF power amplifier designed specifically for mobile terminals. Moreover, it was the opening presentation in the session named "GaN and III - V Material Integration for Next - Generation RF Devices."

This accomplishment represents a significant milestone in applying gallium nitride high electron mobility transistor technology to the field of mobile terminal communications. It has garnered high praise from the international academic community. By engaging in collaborative innovation in both circuit design and process technology, the research team successfully tackled the technical hurdle of the incompatibility between traditional gallium nitride devices and the low - voltage power supply systems used in mobile phones. This breakthrough lays a vital technological groundwork for the advancement of terminal RF architectures in the upcoming 6G era.