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As high-power applications, including mobile communications, satellite communications, and radar, experience rapid growth, Gallium Nitride High Electron Mobility Transistors (HEMTs) have emerged as essential components for applications requiring high frequency, high power, and operation in harsh environments. Nevertheless, with the continual escalation of power density and operating voltage in devices, the issue of self-heating has grown increasingly serious. Traditional single-crystal silicon (Si) or silicon carbide (SiC) substrates can no longer provide adequate heat dissipation capabilities to meet these escalating demands. Utilizing high-thermal-conductivity diamond to create efficient heat dissipation substrates is widely regarded as an ideal approach to tackle the self-heating challenges in GaN devices, thereby enhancing their reliability and power performance.
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