Recently, the Technical Committee on Nanotechnology Products and Systems (IEC/TC 113) of the International Electrotechnical Commission officially unveiled the international standard IEC TS 62607-6-23:2025. Titled "Nanomanufacturing – Key Control Characteristics – Part 6-23: Graphene-Related Products – Sheet Resistance, Carrier Concentration, Carrier Mobility: Hall Bar Method," this standard was developed under the guidance of the Shanghai Institute of Microsystem and Information Technology, which is part of the Chinese Academy of Sciences. Collaborators in this endeavor included the National Center for Nanoscience and Technology, the Shenzhen Institute of Standards and Technology, Taizhou Juna New Energy Co., Ltd., as well as experts hailing from Germany, South Korea, and Canada.

For the first time on the global stage, this standard introduces a standardized measurement process grounded in the Hall bar method. It meticulously outlines the crucial process steps involved in fabricating graphene Hall devices, encompassing sample preparation, electrode creation, protective layer deposition, and plasma etching. Moreover, it puts forward a hard mask process tailored for cost-effective, high-efficiency production. Beyond that, the standard delineates the configuration prerequisites for the measurement system, the requisite environmental conditions, the methodology for data analysis, and the format for result reporting. By doing so, it furnishes a scientifically robust measurement foundation for the utilization of graphene films in diverse domains, including transparent conductive films and flexible electrodes.