On November 27, 2025, Samsung Electronics' Samsung Advanced Institute of Technology (SAIT) proclaimed the release of its research results regarding a novel type of NAND flash memory in the esteemed journal Nature. In this groundbreaking study, through the integration of ferroelectric materials with oxide semiconductors, researchers have, for the very first time, unveiled the fundamental mechanism capable of slashing the power consumption of NAND flash memory by a staggering 96%.

This innovative technology holds immense promise for boosting energy efficiency across a range of domains, including AI data centers and mobile devices. For data centers, it is anticipated to significantly curtail operational costs, while for mobile devices, it is expected to prolong battery life. By charting a distinct technological path centered around "low power consumption, high capacity," Samsung has further cemented its formidable market competitiveness within the SSD sector.