A research team led by Associate Professor Sun Bo from the Tsinghua Shenzhen International Graduate School has achieved a significant breakthrough in the thermal management of semiconductor devices. They have uncovered a new mechanism of electron tunneling heat transfer within multilayer-structured devices. By simulating the operational conditions of "metal-insulator-semiconductor" devices, the team found that when electrons pass through a thin insulating layer via quantum tunneling, they not only generate tunneling currents but also effectively transfer thermal energy. This method of heat conduction, grounded in electron quantum tunneling, markedly improves the interfacial thermal conductance of the devices. It offers a novel strategy for device-level thermal regulation, paving the way for addressing the "thermal bottleneck" problem prevalent in modern electronic devices. Moreover, it opens up fresh possibilities for thermal management, enhancing the reliability and stability of semiconductor devices. The pertinent research findings were published in Physical Review Letters on November 13.