Given the swift expansion of global AI infrastructure and a notable uptick in DRAM demand, Samsung intends to implement substantial modifications to its memory chip production approach. Based on industry insiders in South Korea, Samsung is set to transform some of its NAND flash memory production lines in Pyeongtaek and Hwaseong into DRAM production facilities. Simultaneously, the soon-to-be-established Pyeongtaek Fab 4 will be exclusively dedicated to DRAM manufacturing, incorporating Samsung's cutting-edge 1c process technology. The combined production lines at Pyeongtaek Fab 1 and Hwaseong will also shift more towards DRAM production, with the relevant NAND production machinery being removed. The Pyeongtaek Fab 4 facility is anticipated to start operations as a specialized 1c DRAM production line next year. Moreover, there's a possibility of converting another section initially earmarked for foundry production into a DRAM manufacturing line. Once these adjustments are finalized, Samsung's DRAM output from Hwaseong Fab 1 and Pyeongtaek Fab 4 is projected to surge in the first half of the coming year. The anticipated decrease in NAND production capacity in South Korea is expected to be compensated for by Samsung's factory in Xi'an, China.