A research team hailing from the Shanghai Institute of Microsystem and Information Technology, which is part of the Chinese Academy of Sciences, has made a groundbreaking discovery. They found that the carrier density in graphene Hall devices exhibits a variation dependent on the channel width. Specifically, when the channel width is around 360 μm, it represents an optimal equilibrium point. Leveraging this finding, the team successfully fabricated a quantum resistance array with a resistance value of 8.604 kΩ.
