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Under the leadership of Academician Chu Junhao and Professor Li Wenwu from the School of Future Information Innovation at Fudan University, the research team has put forward a novel mechanism for polarity-dependent two-dimensional hybrid perovskite heterojunction ferroelectric transistors. This mechanism offers a clear explanation of the competitive interplay between ferroelectric polarization and charge trapping within ferroelectric heterojunction transistors. Additionally, it outlines the rules for reversible transitions that hinge on semiconductor polarity. By achieving a heterogeneous synergy between ferroelectric polarization and charge trapping, this mechanism empowers a single device to concurrently exhibit dual functionalities: multi-level non-volatile memory and synaptic weight adjustment.
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