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Long-Term Reliability Assessment of SiC MOS Gate Oxide
2025-10-31 /
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Author：小编
The reliability of the gate oxide in SiC MOSFETs is comprehensively evaluated. This evaluation involves Time-Dependent Dielectric Breakdown (TDDB) testing and E-model assessment. Additionally, Weibull distribution analysis is employed for effective defect screening. To further guarantee the long-term lifespan of the devices and ensure that customers experience zero failures, marathon experiments and V-ramp testing are also carried out.
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