According to information sourced from Tianyancha, Hangzhou Zhongxin Wafer Semiconductor Co., Ltd. has been awarded a patent for its 'Processing Method to Rectify Elliptical Edge Profiles of Silicon Wafers' by the National Intellectual Property Administration. This patent was officially granted on September 23, 2025, bearing the Authorization Publication Number CN119175599B. The patent application was submitted on August 20, 2024.

This innovation primarily tackles the prevalent issue of elliptical edge profiles that often emerge during the roller grinding stage of silicon wafer production. The method entails precisely determining the circle's center by taking diameter measurements from multiple angles. Subsequently, it adjusts the center coordinates and processing parameters of the chamfering processing platform. Through this approach, silicon wafers are transformed into an ideal circular shape, thereby significantly boosting processing efficiency and enhancing the quality of the finished products.

This technological breakthrough is poised to play a pivotal role in propelling the semiconductor industry's upgrade. Moreover, it is expected to bolster the competitiveness of domestic enterprises on the global stage.