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Based on information from Tianyancha, Shanghai Huahong Grace Semiconductor Manufacturing Co., Ltd. has been officially granted a patent for its invention titled "ETOX NOR-Type Flash Memory Device and Its Manufacturing Process" on September 26, 2025. The patent, bearing the authorization announcement number CN119947104B, stems from an application submitted on January 14, 2025. This innovative process involves the formation of a capping layer and deep trenches on the control gate material layer, which are then filled with a sacrificial oxide layer. This approach effectively circumvents the issue of device performance degradation that typically arises from photoresist residue in conventional manufacturing methods. Moreover, it paves the way for the further miniaturization and enhanced integration of memory cell dimensions.
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