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Samsung’s Flash Memory Chips Step Into the 3D Transistor Era: Achieving Lower Power Consumption and Smaller Size
11 hour ago /
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Author：小编
Intel made history by introducing FinFET transistors at the 22nm process node, a move that officially ushered logic processes into the 3D era. Now, Samsung is set to follow suit by applying 3D transistor technology to its flash memory chips for the very first time. The FinFET, or Fin Field-Effect Transistor, derives its name from its distinctive 3D structure that resembles the fins of a fish. When compared to traditional 2D planar transistors, FinFETs boast a multitude of advantages. Intel was the trailblazer in adopting this technology at the 22nm node, with TSMC and Samsung following closely behind at the 14nm and 16nm nodes, respectively. Today, FinFET has firmly established itself as the foundational structure for advanced processes.
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