Recent reports indicate that Samsung Electronics is brimming with confidence in the realm of cutting-edge semiconductor technology, especially regarding the progress of its 2-nanometer Gate-All-Around (GAA) process. At a semiconductor industry conference presided over by Kim Yong-beom, the Chief Policy Officer of the Presidential Office, Song Jae-hyuk, who serves as both the President and Chief Technology Officer of Samsung's Device Solutions Division, lauded the advancements in the 2-nanometer GAA process.

Samsung has substantially boosted its yield target for the 2-nanometer GAA process, raising it from the initial 50% to an ambitious 70%. The company anticipates reaching this milestone by the end of 2025. The inaugural chip to incorporate this technology will be Samsung's proprietary SoC-Exynos 2600. Preliminary internal test results reveal that it has outperformed its competitors across multiple benchmarks. Moreover, Samsung has finalized the foundational design of the second-generation 2-nanometer GAA process and expects to conclude the development of the third-generation 2-nanometer GAA process within the forthcoming two-year period.