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On October 15, 2025, the 3rd Chip Conference, along with the Award Ceremony for the Top Ten Breakthroughs in China's Chip Science at Chip 2024, was grandly inaugurated in Shenzhen. During the conference, the research feat of single-crystal metal oxide gate dielectric wafers tailored for two-dimensional integrated circuits, a brainchild of Di Zengfeng and Tian Zi'ao's team, was duly recognized as one of the "Top Ten Breakthroughs in China's Chip Science at Chip 2024." This milestone leverages single-crystal metal intercalation oxidation technology to craft single-crystal aluminum oxide gate dielectric material wafers at ambient temperatures. Its application in the development of cutting-edge two-dimensional low-power chips paves the way for fresh perspectives in the future evolution of low-power chip technology.
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