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A Monumental Leap in Two-Dimensional Ultrafast Flash Memory: Chinese Team’s Breakthrough Featured in 'Nature' with Expedited Online Publication
2025-10-11 /
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Author：小编
Several months prior, the groundbreaking research conducted by the team helmed by Professor Zhou Peng and Researcher Liu Chunsen from Fudan University made its way into the esteemed pages of the journal 'Nature'. The team's development of the 'PoX' two-dimensional flash memory prototype device marks a significant departure from existing flash memory technology paradigms. This innovative device has achieved an astonishingly fast non-volatile storage speed of 400 picoseconds, setting a new benchmark as the swiftest semiconductor charge storage technology currently in existence.
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