Recently, a research team spearheaded by Professors Sun Hongbo and Bai Benfeng from the Department of Precision Instruments at Tsinghua University has unveiled a groundbreaking approach for crafting infrared ultra-broadband surface-emitting blackbodies on semiconductor surfaces. This innovative method harnesses the energy negative feedback and thermal excitation capabilities inherent in femtosecond lasers when interacting with materials. For the first time, it enables the single-step, stable fabrication of cross-scale structures on semiconductor surfaces, coupled with deep-level modulation. The outcome is the creation of surface-emitting blackbodies boasting ultra-high emissivity, ultra-broadband characteristics, high-temperature resilience, exceptional uniformity, and anti-shedding features. These blackbodies ensure consistent calibration accuracy even under harsh conditions, thereby broadening the scope of infrared detection applications.