Recently, the research team headed by Assistant Professor Gao Yuan from the Shenzhen-Hong Kong College of Microelectronics at the Southern University of Science and Technology has achieved significant advancements in the realm of high-performance power management chips, successfully developing and implementing four representative chips. The relevant research findings have been published in the 2025 VLSI Symposium and the 2025 European Solid-State Electronics Research Conference (ESSERC).

Among these innovations, the high-voltage, high-reliability GaN negative voltage direct-drive chip introduces a reconfigurable dual-mode architecture. This design substantially boosts system reliability, catering to the high power density power supply requirements in data centers. The compact reconfigurable switched-capacitor laser diode driver chip finds applications in autonomous driving LiDAR and medical photoacoustic imaging. It achieves high energy efficiency while reducing the overall system size. The load-independent, high-efficiency Class-E power amplifier chip, equipped with automatic current phase alignment, meets the growing demand for rapid wireless charging in consumer electronic devices, facilitating efficient power transmission. Lastly, the highly integrated bidirectional lithium battery charge and discharge chip addresses the environmental pollution concerns associated with traditional alkaline batteries. It supports bidirectional energy conversion and minimizes system volume.