Dmitrii Kuznetsov, a Russian scholar with a Ph.D. in Computer and Data Science, has recently disclosed a comprehensive long-term research and development roadmap aimed at advancing Russia's indigenous Extreme Ultraviolet (EUV) lithography equipment. This cutting-edge equipment is designed to operate at a precise wavelength of 11.2 nanometers, with the project's timeline commencing in 2026. Initially, it will harness 40-nanometer manufacturing technology, with ambitious plans to progress to sub-10-nanometer process technology by 2037.

The roadmap is meticulously structured into three distinct phases:

• Phase 1 (2026-2028): This initial phase will concentrate on developing a lithography machine capable of supporting 40-nanometer processes. It will be outfitted with a dual-mirror objective lens and is projected to achieve an overlay accuracy of 10 nanometers.
• Phase 2 (2029-2032): The second phase will introduce a scanning lithography machine that supports 28-nanometer processes, with the potential for upgrade to 14 nanometers. This machine will feature a sophisticated four-mirror optical system and will enhance overlay accuracy to an impressive 5 nanometers.
• Phase 3 (2033-2036): The final phase aims to achieve sub-10-nanometer process production. It will utilize a six-mirror configuration and strive for an overlay accuracy of 2 nanometers.

The proposed solution incorporates a hybrid solid-state laser, a light source based on xenon plasma, and mirrors crafted from ruthenium and beryllium. This design diverges from ASML's equipment architecture, potentially offering reduced maintenance requirements and system complexity. The equipment is anticipated to provide resolution coverage spanning from 65 nanometers to 9 nanometers, with a significantly lower unit cost structure compared to ASML's platform.

However, the feasibility of this ambitious plan remains shrouded in uncertainty. It necessitates a technological leap across the entire industry and may not be primarily intended for commercial utilization.