A research team hailing from the Massachusetts Institute of Technology (MIT) in the United States has unveiled an innovative magnetic transistor. This transistor ingeniously blends high - speed operation with high efficiency, paving the way for the creation of more energy - efficient electronic devices. In their research, the team employed the two - dimensional material chromium sulfur bromide. By leveraging this material, they successfully integrated magnetic and semiconductor properties. This integration allows for seamless transitions between different transistor states.

Experimental results have demonstrated that by manipulating the magnetic state of the material, the energy consumption during operation can be significantly reduced. Moreover, due to the stable characteristics and the pure preparation process of chromium sulfur bromide, the resulting transistor outperforms existing magnetic devices. Specifically, it exhibits up to a ten - fold enhancement in current switching and amplification capabilities.