On August 30, 2025, Associate Professor Wang Ruijun from Sun Yat-sen University made a groundbreaking announcement at the 6th Optoelectronic Integrated Chip Conference. Together with the Guangzhou Optoelectronic Memory-Computing Chip Integration Innovation Center (Guangzhou Chip Innovation), Sun Yat-sen University has achieved a significant milestone in silicon-based optoelectronic integration technology. For the first time, they successfully integrated indium phosphide semiconductor lasers onto a standard 300mm (12 inches) diameter silicon photonic platform with a silicon layer thickness of 220 nanometers. This accomplishment marks the sole international instance of such heterogeneous integration on this standard silicon photonic platform. By overcoming the critical technical challenge of integrating on-chip light sources in silicon photonic chips, this achievement provides essential technical support for China's advancement in research and development of the next generation of high-end silicon photonic chips.