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Research Group at Peking University's School of Electronics Engineering Led by Wei Xianlong Achieves Breakthrough in Studying Dielectric Strength of Two-Dimensional Boron Nitride
2025-09-01 /
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Author：小编
The research team led by Wei Xianlong at the School of Electronics Engineering, Peking University, has made groundbreaking discoveries regarding the dielectric strength of two-dimensional hexagonal boron nitride (hBN) under mechanical stress. Utilizing in-situ electron microscopy and advanced micro/nano-fabrication techniques, the team has, for the first time, unveiled the phenomenon of diminished dielectric strength in two-dimensional hBN subjected to mechanical stress. Their findings indicate that mechanical stress decreases the breakdown electric field strength of the material, expedites the breakdown process, and elevates leakage current. Notably, these effects are more pronounced in thinner layers of hBN.
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