A significant breakthrough in the realm of wide bandgap semiconductor material integration has been achieved by the team led by Academician Hao Yue at Xidian University. Recently, Professors Zhang Jincheng and Ning Jing, alongside their colleagues, successfully integrated high-quality β-Ga₂O₃ films with high thermal conductivity polycrystalline diamond substrates. The groundbreaking findings have been published online in Nature Communications under the title "Van der Waals β-Ga₂O₃ Thin Films on Polycrystalline Diamond Substrates". By leveraging graphene as a lattice decoupling layer, this research effectively mitigates the lattice mismatch issues stemming from the disordered crystal orientation of the polycrystalline diamond substrate, enabling the controlled epitaxy of (-201)-oriented β-Ga₂O₃ films. This innovation offers a novel approach to address the thermal management challenges posed by gallium oxide-based high-performance power electronic devices.