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SK Hynix has proudly announced the successful development and commencement of mass production for the world's first 321-layer 2Tb QLC NAND flash memory product. This milestone signifies the groundbreaking achievement of QLC technology surpassing the 300-layer barrier, resulting in a substantial boost in storage density. The innovative product boasts enhanced read-write performance, faster data transfer speeds, and optimized power efficiency, achieved through the incorporation of 6 in-plane dies. These features make it an ideal solution for AI data centers. Looking ahead, SK Hynix intends to leverage this advanced technology in PC SSDs, enterprise-grade SSDs, and smartphone UFS applications, thereby further expanding its presence in the high-capacity storage market.
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