The Shenzhen Municipal Bureau of Industry and Information Technology has recently unveiled a strategic plan. This plan aims to foster the inter-generational advancement of optical modules, transitioning from 800G to the cutting-edge 1.6T and 3.2T capacities. Moreover, it underscores the commitment to facilitating the large-scale production of optical modules with speeds of 800G and beyond. The focus is on the development of high-speed, low-power silicon photonic modules, as well as CPO, LPO, and NPO packaged optical modules. This initiative is set to drive breakthroughs and widespread adoption of core technologies, including high-end thin-film lithium niobate and high-end indium phosphide. Simultaneously, it promotes the evolution and commercialization of all-optical switching technologies, thereby strengthening independent R&D capabilities in key areas such as core materials, optical chips, and optical devices.