On July 26th, as integrated circuit technology progresses towards nodes smaller than 7nm, extreme ultraviolet (EUV) lithography, with its 13.5nm wavelength, has emerged as a pivotal technology for the production of advanced chips. Nevertheless, the challenges posed by the EUV light sources, such as high reflection loss and low brightness, necessitate enhanced absorption efficiency, an optimized reaction mechanism, and rigorous defect control in photoresists. A groundbreaking achievement in this domain has been made by the team led by Professor Xu Huaping from Tsinghua University's Department of Chemistry. They have successfully developed a novel photoresist based on polytelluroxane (PTeO). This innovative photoresist integrates the high-absorption element Te, a unique backbone cleavage mechanism, and material uniformity, presenting a novel design approach for advanced semiconductor manufacturing. This research is anticipated to propel the development of next-generation EUV photoresist materials, thereby fostering innovation in advanced semiconductor process technology.