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"Jita Semiconductor Announces Patent for "Failure Test Circuit and Method"
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Author：小编
Shanghai Jita Semiconductor Co., Ltd. has successfully published its patent titled "Failure Test Circuit and Method," bearing the application publication number CN119619786A and a publication date of March 14, 2025. This innovative patent mitigates the adverse effects of thermal currents during secondary breakdown of the device by strategically connecting the device under test in series with a protection module. This approach not only preserves the integrity of the failure site but also significantly enhances the efficiency and accuracy of testing processes.
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