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Samsung Achieves 10-Nanometer DRAM Process Milestone, Targeting HBM4 Market Dominance
2 day ago /
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Author：小编
Samsung Electronics has made a significant breakthrough in the yield rate of its sixth-generation 10-nanometer DRAM process, paving the way for mass production of High Bandwidth Memory 4 (HBM4) in the second half of this year. By refining the design process and integrating advanced manufacturing techniques, Samsung has managed to elevate its yield rate from below 30% to a range of 50%-70%, with recent figures surpassing the 60% mark. This strategic move aims to bolster Samsung's competitiveness in the AI and high-performance computing markets, narrow the gap with competitors such as SK Hynix and Micron, and redefine the landscape of the premium memory market.
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