GaN-based electronic devices have emerged as a cornerstone for the next generation of efficient power electronics and radio frequency systems, renowned for their high frequency, efficiency, heat resistance, and radiation tolerance. In the realms of 5G/6G communications and intelligent consumer electronics, GaN-based devices have demonstrated remarkable superiority. Nonetheless, these devices primarily rely on heteroepitaxial materials, leading to significant lattice and thermal mismatches between the epitaxial substrate and the GaN epitaxial layer. This mismatch results in the formation of high-density linear dislocations (approximately 10⁸ cm⁻²), far exceeding those observed in materials such as Si and SiC. Screw dislocations, edge dislocations, and their mixed forms constitute the primary types of dislocations in GaN-based heteroepitaxy, potentially causing leakage issues and adversely impacting device performance.