On July 9, 2025, Professor Wang Xinran's research team at Nanjing University, in conjunction with Suzhou Lab and Southeast University, unveiled a groundbreaking study titled "Homoepitaxial Growth of Large-Area Rhombohedral-Stacked MoS₂" in the prestigious international journal Nature Materials. This paper introduces a novel homoepitaxial growth technique for the production of wafer-scale rhombohedral-phase (3R phase) molybdenum disulfide (MoS₂), highlighting its potential applications in ferroelectric devices and storage systems. This milestone signifies a significant advancement in the precise fabrication of two-dimensional materials and opens up new avenues for the multifunctional heterogeneous integration of these materials. The successful development of this technology is poised to accelerate the adoption of two-dimensional materials in electronics, storage technologies, and beyond.