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Tycorun Publishes Patent for 'A Low Reverse Recovery Interference Planar Gate VDMOS and Its Preparation Method'
1 week ago /
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Author：小编
On March 14, 2025, Tycorun Semiconductor Technology (Beijing) Co., Ltd. officially published its patent titled 'A Low Reverse Recovery Interference Planar Gate VDMOS and Its Preparation Method', bearing the application publication number CN119630038A. This groundbreaking patent introduces a buffer zone that significantly reduces the reverse recovery overshoot rise edge of the device, thereby minimizing external interference. This innovation represents a significant advancement in Tycorun's technological landscape, particularly within the realm of silicon carbide power devices.
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