Infineon has announced steady advancements in the manufacture of its gallium nitride (GaN) power semiconductors, with its state-of-the-art 300mm wafer fabrication facility poised to deliver samples to clients in the fourth quarter of 2025. The company has seamlessly integrated 300mm GaN wafer technology into its existing high-volume production setup, marking a significant 2.3x enhancement in chip yield when compared to conventional 200mm processes.