Recently, the research team led by Shen Jian and He Pan from Fudan University's Institute of Micro/Nano Electronic Devices and Quantum Computers has achieved a groundbreaking discovery in the realm of nonlinear response in the Nernst effect. Their work, entitled "Nonlinear Nernst Effect in Trilayer Graphene at Zero Magnetic Field," was published in the esteemed journal Nature Nanotechnology on June 23, 2025. This study delves into the nonlinear Nernst effect in trilayer graphene under zero magnetic field conditions, offering a fresh perspective on this intriguing physical phenomenon.