Micron has introduced its groundbreaking 1γ LPDDR5x DRAM memory, leveraging the advanced 6th generation 10nm-class process. This innovative memory solution achieves a remarkable data transfer rate of up to 10.7Gbps. Representing a significant advancement, this new memory consumes 20% less power than its predecessor and boasts a reduced DRAM module thickness of 0.61mm. As Micron's pioneering effort to incorporate EUV technology, samples of this product, available in capacities ranging from 8GB to 32GB, have already been distributed to partners. Anticipated to revolutionize the mobile landscape, it is slated for integration in flagship smartphones by 2026.
