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SK Hynix has unveiled a groundbreaking UFS 4.1 mobile storage solution, powered by cutting-edge 321-layer 1Tb TLC 4D NAND flash memory. This advanced solution offers a significant 7% enhancement in energy efficiency, while maintaining an ultra-slim profile of just 0.85mm. Boasting a blistering data transfer rate of 4300MB/s, it also delivers a substantial 15% boost in random read speed and an impressive 40% increase in random write speed. Available in two capacities – 512GB and 1TB – samples of this innovative solution are expected to be shipped within the current year, with mass production slated for the first quarter of next year. This latest development from SK Hynix is poised to accelerate the adoption of edge AI technology in mobile devices.
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