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USTC School of Microelectronics Advances Magnetic Memory Research
2025-01-26 /
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Author：小编
A research team headed by Senior Research Fellow Gao Nan from the School of Microelectronics at the University of Science and Technology of China (USTC) has recently achieved a significant breakthrough in the realm of magnetic memory. The team has introduced a novel device design employing a biaxial system, successfully demonstrating intrinsic, high-efficiency field-free writing in spin-orbit torque magnetic memory devices. This groundbreaking work has been published in the prestigious international academic journal Nano Letters, under the title "Intrinsic Solution for Efficient Field-Free Spin-Orbit Torque Switching Based on Biaxial Devices".
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