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Heyuan Gas Secures Patent for Removing CO2 Impurities to Below 0.1ppm
2025-01-15 /
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Author：小编
On January 15, Heyuan Gas proudly announced the acquisition of the invention patent titled "A Device and Process for Preparing Ultra-High Purity Hydrogen Chloride Gas for Semiconductors," bearing patent number ZL202111321362.7. This patent underscores the company's technological prowess in achieving ultra-low impurity levels in its gas production, specifically reducing CO2 impurities to below 0.1 parts per million.
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