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Infineon to Pour 1.1 Billion Euros into Austrian Facility, Targeting Mass Production of 300-Millimeter Wafer GaN Power Semiconductors
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Author：小编
On October 27, Infineon made an announcement that it will set up the world's inaugural large-scale production hub for the next generation of Gallium Nitride (GaN) power semiconductors, which will be based on 300-millimeter wafers, right here in Europe. As a key component of this ambitious project, Infineon has earmarked approximately 1.1 billion euros for investment by 2034. This investment will be channeled into the existing cleanroom facilities at its Villach plant in Austria, utilizing both the current infrastructure and upgraded elements to bolster production capacity. Operations at this state-of-the-art base are slated to commence by the close of 2027.
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