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Changxin’s G6 Memory: Area Shrinks by Another 30%, Introducing the Bonding Process for the First Time
1 day ago /
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Author：小编
Recently, the anticipated technical specifications for Changxin Technology’s G6 platform—the next-generation memory technology from a leading domestic DRAM manufacturer—have come to light. According to the plan, Changxin will continue to rely on DUV lithography for G6-generation memory production, with a projected launch as early as 2028. Compared to its predecessor, the G5 generation, the G6 will see its cell area shrink from 0.00128205 square micrometers to just 0.000896 square micrometers, marking a significant 30% reduction.
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